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SQD50P06-15L
www.vishay.com
TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
80
80
70
60
50
40
30
V GS = 10 V thru 4 V
70
60
50
40
30
20
10
3V
20
10
T C = 125 ° C
25 ° C
- 55 °C
0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
100
V DS - Drain-to-Source Voltage (V)
Output Characteristics
T C = - 55 °C
25 °C
0.05
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
80
60
40
125 °C
0.04
0.03
0.02
V GS = 4.5 V
20
0
0.01
0
V GS = 10 V
0
10
20
30
40
50
60
0
16
32
48
64
80
V GS - Gate-to-Source Voltage (V)
Transconductance
I D - Drain Current (A)
On-Resistance vs. Drain Current
10
6000
I D = 14.4 A
5000
4000
C iss
8
6
V DS = 30 V
3000
4
2000
1000
0
C oss
C rss
2
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
80
90
100
V DS - Drain-to-Source Voltage (V)
Capacitance
Q g - Total Gate Charge (nC)
Gate Charge
S12-2006-Rev. E, 20-Aug-12
3
Document Number: 69098
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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